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TP65H050G4YS

Part number TP65H050G4YS
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Description 650 V 35 A GAN FET HIGH VOLTAGE
Encapsulation
Packing Tube
Quantity 402
RoHS status YES
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Total number

Quantity

Price

Total price

1

$10.0520

$10.0520

10

$8.8550

$88.5500

450

$6.9370

$3,121.6500

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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)132W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

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