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TP65H050G4WS

Part number TP65H050G4WS
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Description 650 V 34 A GAN FET
Encapsulation
Packing Tube
Quantity 213
RoHS status YES
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Inventory:
Total number

Quantity

Price

Total price

1

$10.0520

$10.0520

30

$8.1340

$244.0200

120

$7.6580

$918.9600

510

$6.9370

$3,537.8700

1020

$6.3630

$6,490.2600

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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

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