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TP65H050G4BS

Part number TP65H050G4BS
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Description 650 V 34 A GAN FET
Encapsulation
Packing Tube
Quantity 193
RoHS status YES
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Total number

Quantity

Price

Total price

1

$8.7780

$8.7780

50

$7.1050

$355.2500

100

$6.6850

$668.5000

500

$6.0620

$3,031.0000

1000

$5.5580

$5,558.0000

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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

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