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| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | HEXFET® |
| Package | Tube |
| Product Status | DISCONTINUED |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 47A, 10V |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 50 V |
